CS82N25AKR-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤35mΩ)
* Low Gate Charge (Typical Data: 148.5nC)
* Low Reverse transfer capacitances(Typical: 73.9pF)
.
Power switch circuit of electron ballast and adaptor.
250
V
82
A
250
W
25
mΩ
Absolute（Tc= 25℃ unless otherwis.
CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
VDSS ID PD (TC=25℃) RDS(ON)T.
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